View HMC495LP3_618523.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Features
Wideband RF Frequency Range High Carrier Suppression: 38 dBc Very Low Noise Floor: -158 dBm/Hz Low LO Power: -6 to +6 dBm Differential or Single Ended LO Input Single Low Current Supply: +3.3V@ 108 mA
Typical Applications
The HMC495LP3 / HMC495LP3E is suitable for various modulation systems: * UMTS, GSM or CDMA Basestations * Fixed Wireless or WLL * ISM Transceivers, 900 & 2400 MHz
8
MODULATORS - SMT
* GMSK, QPSK, QAM, SSB Modulators
Functional Diagram
General Description
The HMC495LP3 & HMC495LP3E are low noise Wideband Direct Quadrature Modulator RFICs which are ideal for digital modulation applications from 250 - 3800 MHz including; Cellular/3G, Broadband Wireless Access & ISM circuits. Housed in a compact 3x3 mm (LP3) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode while the Baseband inputs will support modulation inputs from DC - 250 MHz typical. This device is optimized for a supply voltage of +3.3V @ 108 mA and will provide stable performance over a +3.0V to +3.6V range.
Electrical Specifications, See Test Conditions on following page herein.
Parameter Frequency Range, RF Output Power Output P1dB Output IP3 Output Noise Floor Carrier Suppression (uncalibrated) Sideband Suppression (uncalibrated) IM3 Suppression RF Port Return Loss LO Port Return Loss CDMA IS95 ACPR@ 880 MHz & 1960 MHz Channel Power W-CDMA 3GPP ACPR@ 1960 & 2140 MHz Channel Power N/A N/A -60 -17.3 -59 -14.4 N/A N/A dBc dBm -72 -15 -71.5 -18.4 N/A N/A N/A N/A dBc dBm -7 Min. Typ. 450 - 960 -5 2 17 -159 38 34 59 18 13 -8 Max. Min. Typ. 1800 - 2200 -6 1 14 -158 38 31 50 17 8 -9 Max. Min. Typ. Max. Min. Typ. Max. Units MHz dBm dBm dBm dBm/Hz dBc dBc dBc dB dB 2100 - 2700 -7 0 14 -158 35 30 50 16 7 -11 3400 - 3800 -9 -2 13 -157 34 28 56 13 5
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Electrical Specifications, (continued)
Parameter RF Output RF Frequency Range RF Return Loss LO Input LO Frequency Range LO Input Power LO Port Return Loss Baseband Input Port Baseband Port Bandwidth Baseband Input DC Voltage (Vbbdc) Baseband Input DC Bias Current (Ibbdc) Single-ended Baseband Input Capacitance DC Power Requirements Supply Voltage (Vcc1, Vcc2, Vb1, Vb2) Supply Current (Icc1, Icc2, Ib1, Ib2) DC 1.0 1.15 40 0.5 250 1.2 MHz V A pF With 68 Ohm shunt resistor on LO port. With 68 Ohm shunt resistor on LO port. 0.25 -6 0 7 3.8 +6 GHz dBm dB 0.25 16 3.8 GHz dB Conditions Min. Typ. Max. Units
8
MODULATORS - SMT
8-3
With 50 source & external 10 pF shunt cap to ground. Refer to HMC495LP3 Application Circuit. This parameter can be varied in order to optimize the device performance over temperature and/or supply. Single-ended. De-embed to the lead of the device. See Test Conditions Below
3
3.3 108
3.6
V mA
Test Conditions: Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter Temperature Baseband Input Frequency Baseband Input DC Voltage (Vbbdc) Baseband Input AC Voltage Baseband Input AC Voltage for OIP3 Measurement Frequency Offset for Output Noise Measurements Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2) LO Input Power LO Input Mode Mounting Configuration Sideband & Carrier Feedthrough (Peak to Peak Differential, I and Q) (Peak to Peak Differential, I and Q) Condition +25 C 200 kHz 1.15V 800 mV 400 mV per tone @ 150 & 250 kHz 20 MHz 3.3V 0 dBm Single-Ended Refer to HMC495LP3 Application Schematic Herein Uncalibrated
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The "Uncalibrated, +25 C" Sideband and Carrier Suppression plots were measured at room temperature, while the "Uncalibrated, over Temperature" Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T= -40 C, +25 C, and +85 C. The "Calibrated, + 25 C" Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude balance and I/Q phase offset (skew) at +25 C, and at each LO input power level. The +25 C adjustment settings were held constant during tests over temperature. The "Calibrated, over Temperature" plots represent the worst case calibrated Sideband Suppression levels at T= -40 C, +25 C, and +85 C. The "Calibrated, +25 C" Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC offsets at +25 C, and at each LO input power level. The +25 C adjustment settings were held constant during tests over temperature. The "Calibrated, over Temperature" plots represent the worst case Carrier Suppression levels measured at T= -40 C, +25 C, and +85 C. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Output Noise Floor and P1dB vs. Frequency
-120 5 0 -5 -10 -15 -20 -25 -30 -35 OUTPUT NOISE (dBm/Hz)
Wideband Performance vs. Frequency
OUTPUT POWER (dBm), CARRIER SUPPR. (dBc) SIDEBAND SUPPR. (dBc), 3rd HARMONIC (dBc) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 0 400
3rd HARMONIC CARRIER SUPPRESSION SIDEBAND SUPPRESSION OUTPUT POWER
-130
0 OUTPUT P1dB (dBm)
-140
-5
8
MODULATORS - SMT
-150
-10
-40 -45 -50 -55
-160
-15 SET-UP NOISE FLOOR -20 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz)
-170 0 400
-60 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz)
Output IP3 vs. Frequency
20 18 16 14 12 10 8 6 4 2 0 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz)
Return Loss
0
LO (Single-ended) RF
-5 RETURN LOSS (dB)
OUTPUT IP3 (dBm)
-10
-15
-20
-25 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 FREQUENCY (MHz)
8-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs. LO Power Over Supply@ 830 MHz
20 15 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) 10 5 0 -5 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
Output IP3 & Output Power vs. LO Power Over Temperature@ 830 MHz
20 15 OUTPUT IP3 (dBm) 10 5 0 -5 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
+25 C +85 C -40 C
-3 -4 -5 -6 -7 -8 -9
-3 -4 OUTPUT POWER (dBm) -5 -6 -7 -8 -9
8
MODULATORS - SMT
8-5
Output Noise vs. LO Power Over Temperature@ 830 MHz
-140
Output Noise vs. LO Power Over Supply@ 830 MHz
-140
OUTPUT NOISE (dBm/Hz)
-145
+25 C +85 C -40 C
OUTPUT NOISE (dBm/Hz)
-145
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
-150
-150
-155
-155
-160 -6
-160 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm) LO POWER (dBm)
Sideband Suppression* vs. LO Power@ 830 MHz
-20 SIDEBAND SUPPRESSION (dBc)
Carrier Suppression* vs. LO Power@ 830 MHz
-20 CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-50
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
* See note titled "Calibrated vs. Uncalibrated test results" herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs. LO Power Over Supply@ 1900 MHz
20 15 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) 10 5 0 -5 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
Output IP3 & Output Power vs. LO Power Over Temperature@ 1900 MHz
20 15 OUTPUT IP3 (dBm) 10 5 0 -5
+25 C +85 C -40 C
-3 -4 -5 -6 -7 -8 -9 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
-3 -4 OUTPUT POWER (dBm) -5 -6 -7 -8 -9
8
MODULATORS - SMT
-10
Output Noise vs. LO Power Over Temperature@ 1900 MHz
-140
Output Noise vs. LO Power Over Supply@ 1900 MHz
-140
OUTPUT NOISE (dBm/Hz)
OUTPUT NOISE (dBm/Hz)
-145
+25 C +85 C -40 C
-145
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
-150
-150
-155
-155
-160 -6
-160 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm) LO POWER (dBm)
Sideband Suppression* vs. LO Power@ 1900 MHz
-20 SIDEBAND SUPPRESSION (dBc)
Carrier Suppression* vs. LO Power@ 1900 MHz
-20 CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25 C CALIBRATED, +25 C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25 C CALIBRATED, +25 C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-50
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
* See note titled "Calibrated vs. Uncalibrated test results" herein.
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Output IP3 & Output Power vs. LO Power Over Supply@ 2100 MHz
20 15 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) 10 5 0 -5 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
Output IP3 & Output Power vs. LO Power Over Temperature@ 2100 MHz
20 15 OUTPUT IP3 (dBm) 10 5 0 -5 -10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
+25 C +85 C -40 C
-3 -4 -5 -6 -7 -8 -9
-3 -4 OUTPUT POWER (dBm) -5 -6 -7 -8 -9
8
MODULATORS - SMT
8-7
Output Noise vs. LO Power Over Temperature@ 2100 MHz
-140
Output Noise vs. LO Power Over Supply@ 2100 MHz
-140
OUTPUT NOISE (dBm/Hz)
-145
+25 C +85 C -40 C
OUTPUT NOISE (dBm/Hz)
-145
Vcc= 3.0 Volts Vcc= 3.3 Volts Vcc= 3.6 Volts
-150
-150
-155
-155
-160 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
-160 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 LO POWER (dBm)
Sideband Suppression* vs. LO Power@ 2100 MHz
-20 SIDEBAND SUPPRESSION (dBc)
Carrier Suppression* vs. LO Power@ 2100 MHz
-20 CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-50
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
-60 -6 -5 -4 -3 -2 -1 0 1 2 LO POWER (dBm) 3 4 5 6
* See note titled "Calibrated vs. Uncalibrated test results" herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
PCS CDMA @ 1960 MHz ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
-20 -30 -40 POWER (dBm) -50 -60 -70 -80 -90 -100
CP = -18.42dBm ACPR = -71.5dBc CP = -18.42dBm ACPR = -71.5dBc
Cellular CDMA @ 880 MHz ACPR @ 885 kHz, Vcc= 3.3V, Vdc= 1.15V
-20 -30 -40
POWER (dBm)
-50 -60 -70 -80 -90 CP = -15dBm ACPR = -72.3dBc CP = -15dBm ACPR = -72dBc
8
MODULATORS - SMT
-100 879
879.3
879.5
879.8
880
880.3
880.5
880.8
881
1959
1959.25 1959.5 1959.75
1960
1960.25 1960.5 1960.75
1961
FREQUENCY (MHz)
FREQUENCY (MHz)
W-CDMA @ 1960 MHz ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
-20 -30 -40 CP = -17.3dBm ACPR = -59.7dBc CP = -17.3dBm ACPR = -59.8dBc
W-CDMA @ 2140 MHz ACPR @ 3.84 MHz, Vcc= 3.3V, Vdc= 1.15V
-20 -30 -40 CP = -14.4Bm ACPR = -59.2dBc CP = -14.4dBm ACPR = -59.8dBc
POWER (dBm)
POWER (dBm)
-50 -60 -70 -80 -90
-50 -60 -70 -80 -90
-100 1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965
-100 2135 2136 2137 2138 2139 2140 2141 2142 2143 2144 2145
FREQUENCY (MHz)
FREQUENCY (MHz)
Note 1: W-CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using "Test Model 1 with 64 channels" settings in the Agilent E3844C. Note 2: CDMA (Modulation Set-up for ACPR Mode); The Baseband I and Q input signals were generated using the "9 channels forward" settings in the Agilent E3844C (pilot, paging, sync and 6 traffic channels).
8-8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Absolute Maximum Ratings
Vcc1, Vcc2, VB1, VB2 LO Input Power Baseband Input Voltage (Reference to GND) Channel Temperature Continuous Pdiss (T = 85C) (Derate 43.5 mW/C above 85C) Thermal Resistance (Rth) (junction to lead) Storage Temperature Operating Temperature -0.5 to +6V +10 dBm Max. -0.5 to +1.8V 150 C 2.83 Watts 23 C/Watt -40 to +150 C -40 to +85 C
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
8
MODULATORS - SMT
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Outline Drawing
Package Information
Part Number HMC495LP3 HMC495LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] 495 XXXX 495 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8-9
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Pin Descriptions
Pin Number 1, 4, 9, 12 Function GND Description These pins and the ground paddle must be connected to a high quality RF/DC ground. Differential LO input ports. This device may be driven in either differential or single ended mode. In single ended mode, one port should be driven by the LO source while the other port may be terminated with a 50 resistor to ground. An external shunt 68 resistor is used to improve VSWR, while an external 100 pF capacitor is required to prevent DC supply voltage from appearing on the customer's PC board. Interface Schematic
8
MODULATORS - SMT
2, 3
LOP, LON
5
VB2
Bias Voltage for the LO stage. This voltage will affect the Sideband Suppression, the Output Noise Floor and the Power Consumption. The ideal voltage range for this port is between +2.7 Vdc and +3.0 Vdc. The nominal current for this port is 5.3 mA.
6, 7
Qn, Qp
Differential Quadrature baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.0 - 1.15V. The nominal recommended baseband input voltage is 800 mV peak to peak differential. By adjusting the DC bias voltage on ports Qn & Qp, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 5 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level.
8
VB1
Bias Voltage for the output stage. This voltage should be connected to the Vcc supply. Nominal supply voltage is 3.3 Vdc. The nominal current for this port is 2.4 mA.
10
N/C
No connect.
11
RFP
RF Output port. This port is matched to 50. A series capacitor should be connected to this port in order to prevent the DC supply voltage from appearing on the customer's PC board.
8 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Pin Descriptions (continued)
Pin Number Function Description Supply voltage for the mixer and output stages. Set to 3.3V for nominal operation. The nominal current for this port is 37 mA. Differential In-Phase baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.0 - 1.15V.The nominal recommened baseband input voltage is 800 mV peak to peak differential. By adjusting the DC bias voltage on ports In & Ip, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 5 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level. Interface Schematic
13
Vcc1
8
MODULATORS - SMT
8 - 11
14, 15
Ip, In
16
Vcc2
Supply voltage for the LO stage. Set to 3.3V for nominal operation. The nominal current for this port is 64 mA.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Evaluation PCB
8
MODULATORS - SMT
List of Materials for Evaluation PCB 107413
Item J1 - J8 J9 - J12 C1, C2, C7 C3, C6, C8, C11 C4, C5, C9, C10 C12 - C15 R1, R2 R3 U1 PCB [2] Description PCB Mount SMA Connector DC Molex Connector 100 pF Chip Capacitor, 0402 Pkg. 1000 pF Chip Capacitor, 0402 Pkg. 10 pF Chip Capacitor, 0402 Pkg. 4.7 uF, Case A, Tantulum 68 Ohms, 0402 Pkg. 62 Ohms, 0402 Pkg. HMC495LP3 / HMC495LP3E Modulator 107309 Eval Board
[1]
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaulation PCB [2] Circuit Board Material: Rogers 4350
8 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC495LP3 / 495LP3E
v02.0705
SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
Application & Evaluation PCB Schematic
8
MODULATORS - SMT
Note: Baseband input frequency range is dependent on value of C4, C5, C9 and C10. The value of 10 pF was chosen to give a typical response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and broadband noise floor response by decreasing the value of C4, C5, C9 & C10.
Characterization Set-up
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 13

▲Up To Search▲

Price & Availability of HMC495LP3

	To Download HMC495LP3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .